New scalable platform for III-V Nanowires

In this Letter, we report gold-free templated growth of III-V NWs by molecular beam epitaxy using an approach that enables patternable and highly regular branched NW arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs or other III-V semiconductors on top of defect-free GaAs nanomembranes (NMs) yielding laterally-oriented, low-defect InAs and InGaAs NWs. This system provides a new platform for interconnected nanowire networks of interest for topological Qubits based on Majorana fermions. Published in NanoLetters.

Zurück